Comparison between semiconductor magnetoresistive element and other magnetic sensors

 1. Semiconductor magnetoresistive element (SMRE)  

 ■ The resistance value changes depending on the magnetic flux density applied to a semiconductor film in vertical direction. 

 ■ The resistance value changes in the same manner when either magnetic field (the north or south polarity) is applied.

    In other words,  the polarity cannot be identified.

 ■ By combining multiple elements, the resistance value change can be taken out as a voltage change.
 ■ Because the magnetoresistive effect has no saturation to the magnetic flux density, 
large output voltage amplitude can be obtained.
 ■ Because InSb is used for normal semiconductor magnetoresistive element, 
the resistance value largely depends on the temperature,

    but our products is Sn-doped with excellent temperature characteristics.
 ■ Because a magnetic field is detected as a plane, the chip size is larger than 
that of a Hall element.
 ■ The output voltage has very small waveform distortion and is close to the ideal sine wave.

    Therefore signals with high resolution can be obtained by electric interpolation. 

 ■ When the gear rotation is detected with a bias magnet, the DC component of the output voltage no longer depends on the gap.

 

 2. Hall element (HE)                                                              
  •  ■ The hall voltage changes depending on the magnetic flux density applied to a semiconductor film in vertical direction.
  •  ■ The hall voltage changes to positive or negative depending on the north or south polarity. In other words,
  •     the polarity can be identified.
  •  ■ In addition to compound semiconductors (GaAs, InAs, InSb), silicon can be used as a material.
  •  ■ Because a magnetic field is detected as a point, the chip size is smaller than that of
  •     a semiconductor magnetoresistive element.

 

 3. Anisotropic magnetoresistive element (AMRE)                  
 ■ The resistance value changes depending on the magnetic flux density applied to a ferromagnetic film in parallel direction.
  •  ■ By combining multiple elements, the resistance value change can be taken out as a voltage change.
  •  ■ It has high sensitivity to the magnetic flux density, the magnetoresistive effect is,
  •     however, saturated with relatively smaller magnetic flux density.
  •  ■ Because the saturation value for the magnetoresistive effect is only a few percents, 
  •     the output signal amplitude is relatively small.
  •  ■ Because a magnetic material is used as a material, it exhibits hysteresis against the magnetic field.

 

 

 

 

 

 

 

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