Special features for semiconductor magnetoresistive elements made by AKM

The magnetoresistive elements with excellent temperature characteristics and

small individual difference in the electrical characteristics have been implemented.


 

 ■ Very small temperature drift of neutral voltage


 With our unique semiconductor film manufacturing technology, the temperature drift of neutral voltage has been minimized.   

                                                                                     

 

 ■ Better temperature characteristics of resistance value comparing with traditional products


With AKM's unique Sn dope technology (Sn: n-type carrier) to InSb, the temperature coefficient of the element resistance value has been drastically reduced.

Temperature coefficient of traditional element resistance value: -20%/ °C (around room temperature)
->Temperature coefficient of product resistance value: -0.2%/ °C (around room temperature)
                                                                                                        

 

 

 ■ Small individual difference in electrical characteristics


Since a highly accurate approach is employed to form a single

crystal film and the element process using the photolithography method

is applied, the elements with very similar and excellent electrical

characteristics can be manufactured.

 

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