Special features for semiconductor magnetoresistive elements made by AKM
The magnetoresistive elements with excellent temperature characteristics and
small individual difference in the electrical characteristics have been implemented.
■ Very small temperature drift of neutral voltage
■ Better temperature characteristics of resistance value comparing with traditional products
Temperature coefficient of traditional element resistance value: -20%/ °C (around room temperature)
■ Small individual difference in electrical characteristics
Since a highly accurate approach is employed to form a single
crystal film and the element process using the photolithography method
is applied, the elements with very similar and excellent electrical
characteristics can be manufactured.