Special features for semiconductor magnetoresistive elements made by AKM

The magnetoresistive elements with excellent temperature characteristics and

small individual difference in the electrical characteristics have been implemented.


 ■ Very small temperature drift of neutral voltage

 With our unique semiconductor film manufacturing technology, the temperature drift of neutral voltage has been minimized.   



 ■ Better temperature characteristics of resistance value comparing with traditional products

With AKM's unique Sn dope technology (Sn: n-type carrier) to InSb, the temperature coefficient of the element resistance value has been drastically reduced.

Temperature coefficient of traditional element resistance value: -20%/ °C (around room temperature)
->Temperature coefficient of product resistance value: -0.2%/ °C (around room temperature)



 ■ Small individual difference in electrical characteristics

Since a highly accurate approach is employed to form a single

crystal film and the element process using the photolithography method

is applied, the elements with very similar and excellent electrical

characteristics can be manufactured.


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