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Semiconductor Magnetoresistive Elements
Technical Resources
Features for semiconductor magnetoresistive elements made by AKM
The magnetoresistive elements with excellent temperature characteristics and small individual difference in the electrical characteristics have been implemented.
Very small temperature drift of offset voltage
With our unique semiconductor film manufacturing technology, the temperature drift of offset voltage has been minimized.
Better temperature characteristics of resistance value comparing with traditional products
With AKM's unique Sn dope technology (Sn: n-type carrier) to InSb, the temperature coefficient of the element resistance value has been drastically reduced.
Temperature coefficient of traditional element resistance value: -2.0%/ °C (around room temperature)
→ Temperature coefficient of product resistance value: -0.2%/ °C (around room temperature)
Small individual difference in electrical characteristics
Since a highly accurate approach is employed to form a single crystal film and the element process using the photolithography method is applied, the elements with very similar and excellent electrical characteristics can be manufactured.
Encoder Configuration Examples
A differential output semiconductor magnetoresistive element, (SMRE), for module, "m" = 0.3 gear wheels MS0031
The MS0031 eliminates in-phase noise with differential output signals of A+/A- and B+/B-. The MS0031 achieves high resolution rotation angle detection exceeding 20-bit from electronic interpolation. This is due to its stunning temperature characteristics while having extremely small variability among individual devices.
A+/A-, B+/B- Differential Output
Each of the A and B phases is provided as a differential pair. Taking the difference between the signals cancels common-mode noise and doubles the output amplitude, helping magnetic encoders achieve higher accuracy and resolution.
MS0031
Design Support
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